IPB95R130PFD7ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 1000+ | 5.15 EUR |
| 2000+ | 4.87 EUR |
| 3000+ | 4.73 EUR |
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Technische Details IPB95R130PFD7ATMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.25mA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V.
Weitere Produktangebote IPB95R130PFD7ATMA1 nach Preis ab 5.03 EUR bis 13.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPB95R130PFD7ATMA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB95R130PFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.25mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V |
auf Bestellung 3089 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB95R130PFD7ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.86 EUR |
| 10+ | 7.96 EUR |
| 100+ | 6.39 EUR |
| 500+ | 5.68 EUR |
| 1000+ | 5.03 EUR |
| IPB95R130PFD7ATMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
auf Bestellung 3089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.29 EUR |
| 10+ | 8.97 EUR |
| 100+ | 6.53 EUR |
| 500+ | 5.49 EUR |