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IPB95R450PFD7ATMA1

IPB95R450PFD7ATMA1 Infineon Technologies


Infineon_IPB95R450PFD7_DataSheet_v02_01_EN-3011909.pdf Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 1280 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.81 EUR
10+3.84 EUR
100+2.69 EUR
500+2.25 EUR
1000+2.22 EUR
2000+1.95 EUR
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Technische Details IPB95R450PFD7ATMA1 Infineon Technologies

Description: MOSFET N-CH 950V 13.3A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V.

Weitere Produktangebote IPB95R450PFD7ATMA1 nach Preis ab 2.24 EUR bis 5.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.98 EUR
10+3.92 EUR
100+2.74 EUR
500+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Hersteller : Infineon Technologies infineon-ipb95r450pfd7-datasheet-v02_01-en.pdf Trans MOSFET N-CH 950V 13.3A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH