| Anzahl | Preis |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.9 EUR |
| 2000+ | 1.78 EUR |
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Technische Details IPB95R450PFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 360µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB95R450PFD7ATMA1 nach Preis ab 2.24 EUR bis 5.98 EUR
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IPB95R450PFD7ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 950V 13.3A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 360µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB95R450PFD7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.98 EUR |
| 10+ | 3.92 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.24 EUR |