auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 3.84 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.22 EUR |
| 2000+ | 1.95 EUR |
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Technische Details IPB95R450PFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V.
Weitere Produktangebote IPB95R450PFD7ATMA1 nach Preis ab 2.24 EUR bis 5.98 EUR
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IPB95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 950V 13.3A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 13.3A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 950V 13.3A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V |
Produkt ist nicht verfügbar |