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IPBE65R115CFD7AATMA1

IPBE65R115CFD7AATMA1 Infineon Technologies


Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 976 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+5.50 EUR
100+3.94 EUR
500+3.76 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPBE65R115CFD7AATMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS PG-TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 490µA, Supplier Device Package: PG-TO263-7-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V, Qualification: AEC-Q101.

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IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies Infineon_IPBE65R115CFD7A_DataSheet_v02_02_EN-3362550.pdf MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.68 EUR
10+5.95 EUR
100+4.26 EUR
500+3.75 EUR
1000+3.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies infineon-ipbe65r115cfd7a-datasheet-v02_02-en.pdf N-Channel MOSFET Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH