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IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1 Infineon Technologies


Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 2870 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
172+2.94 EUR
Mindestbestellmenge: 172
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPBE65R190CFD7AATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 14A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 320µA, Supplier Device Package: PG-TO263-7-11, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V, Qualification: AEC-Q101.

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IPBE65R190CFD7AATMA1 IPBE65R190CFD7AATMA1 Hersteller : Infineon Technologies Infineon_IPBE65R190CFD7A_DataSheet_v02_01_EN-3362661.pdf MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.11 EUR
10+4.26 EUR
25+4.24 EUR
100+3.15 EUR
250+3.13 EUR
500+2.69 EUR
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IPBE65R190CFD7AATMA1 Hersteller : Infineon Technologies infineon-ipbe65r190cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R190CFD7AATMA1 IPBE65R190CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6 Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R190CFD7AATMA1 IPBE65R190CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6 Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH