IPC020N10L3X1SA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 173+ | 0.83 EUR |
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Technische Details IPC020N10L3X1SA1 Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 12µA, Supplier Device Package: Sawn on foil, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Drain to Source Voltage (Vdss): 100 V.
Weitere Produktangebote IPC020N10L3X1SA1 nach Preis ab 0.84 EUR bis 0.84 EUR
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IPC020N10L3X1SA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 3-Pin Chip Wafer |
auf Bestellung 12794 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC020N10L3X1SA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 1A SAWN ON FOIL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 12µA Supplier Device Package: Sawn on foil Drive Voltage (Max Rds On, Min Rds On): 4.5V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar |