IPC100N04S5-1R7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Gate charge: 83nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
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Technische Details IPC100N04S5-1R7 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8, Case: PG-TDSON-8, Mounting: SMD, Drain-source voltage: 40V, Drain current: 100A, On-state resistance: 1.7mΩ, Type of transistor: N-MOSFET, Power dissipation: 115W, Polarisation: unipolar, Gate charge: 83nC, Technology: OptiMOS™ 5, Kind of channel: enhancement, Gate-source voltage: ±20V, Anzahl je Verpackung: 5000 Stücke.
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IPC100N04S5-1R7 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Gate charge: 83nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |