IPC100N04S5-1R9 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IPC100N04S5-1R9 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8, Case: PG-TDSON-8, Mounting: SMD, Drain-source voltage: 40V, Drain current: 100A, On-state resistance: 1.9mΩ, Type of transistor: N-MOSFET, Power dissipation: 100W, Polarisation: unipolar, Gate charge: 65nC, Technology: OptiMOS™ 5, Kind of channel: enhancement, Gate-source voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPC100N04S5-1R9
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
IPC100N04S5-1R9 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 65nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |