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IPC100N04S5-1R9

IPC100N04S5-1R9 INFINEON TECHNOLOGIES


IPC100N04S51R9.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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Technische Details IPC100N04S5-1R9 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 100A, Power dissipation: 100W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 1.9mΩ, Mounting: SMD, Gate charge: 65nC, Kind of channel: enhancement, Technology: OptiMOS™ 5.