
IPC100N04S5-2R8 INFINEON TECHNOLOGIES

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC100N04S5-2R8 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 100A, Power dissipation: 75W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 2.8mΩ, Mounting: SMD, Gate charge: 45nC, Kind of channel: enhancement, Technology: OptiMOS™ 5, Anzahl je Verpackung: 1 Stücke.
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IPC100N04S5-2R8 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |