IPC100N04S51R7ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details IPC100N04S51R7ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 60µA, Supplier Device Package: PG-TDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPC100N04S51R7ATMA1 nach Preis ab 1.04 EUR bis 3.56 EUR
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IPC100N04S51R7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 19970 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC100N04S51R7ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPC100N04S51R7ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.52 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.12 EUR |
| 2000+ | 1.09 EUR |
| IPC100N04S51R7ATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 1.09 EUR |
| 5000+ | 1.04 EUR |


