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IPC100N04S5L-1R1

IPC100N04S5L-1R1 INFINEON TECHNOLOGIES

IPC100N04S5L1R1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 150W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
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Technische Details IPC100N04S5L-1R1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8, Case: PG-TDSON-8, Mounting: SMD, Power dissipation: 150W, Gate charge: 0.14µC, Polarisation: unipolar, Technology: OptiMOS™ 5, Drain current: 100A, Kind of channel: enhancement, Drain-source voltage: 40V, Transistor: N-MOSFET, Gate-source voltage: ±16V, On-state resistance: 1.1mΩ.