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IPC100N04S5L-1R1

IPC100N04S5L-1R1 INFINEON TECHNOLOGIES

IPC100N04S5L1R1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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Technische Details IPC100N04S5L-1R1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 100A, Power dissipation: 150W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 1.1mΩ, Mounting: SMD, Gate charge: 0.14µC, Kind of channel: enhancement, Technology: OptiMOS™ 5.