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IPC100N04S5L-1R9

IPC100N04S5L-1R9 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 81nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC100N04S5L-1R9 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8, Case: PG-TDSON-8, Mounting: SMD, Drain-source voltage: 40V, Drain current: 100A, On-state resistance: 1.9mΩ, Type of transistor: N-MOSFET, Power dissipation: 100W, Polarisation: unipolar, Gate charge: 81nC, Technology: OptiMOS™ 5, Kind of channel: enhancement, Gate-source voltage: ±16V, Anzahl je Verpackung: 1 Stücke.

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IPC100N04S5L-1R9 IPC100N04S5L-1R9 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 81nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH