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IPC50N04S5-5R8

IPC50N04S5-5R8 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC50N04S5-5R8 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 50A, Power dissipation: 42W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 5.8mΩ, Mounting: SMD, Gate charge: 18nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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IPC50N04S5-5R8 IPC50N04S5-5R8 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH