IPC50N04S5L-5R5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC50N04S5L-5R5 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 50A, Power dissipation: 42W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 23nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPC50N04S5L-5R5
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IPC50N04S5L-5R5 | Hersteller : Infineon Technologies | MOSFET MOSFET_(20V 40V) |
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IPC50N04S5L-5R5 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |