IPC80N04S403ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 80A TDSON-8-23, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TDSON-8-23, Vgs(th) (Max) @ Id: 4V @ 60µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Qualification: AEC-Q101, Grade: Automotive.