Produkte > INFINEON TECHNOLOGIES > IPC90N04S53R6ATMA1
IPC90N04S53R6ATMA1

IPC90N04S53R6ATMA1 Infineon Technologies

Infineon_IPC90N04S5_3R6_DS_v01_00_EN-1731641.pdf Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V,40V)
auf Bestellung 5451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.47 EUR
10+1.22 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.59 EUR
5000+0.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPC90N04S53R6ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 90A 8TDSON-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 23µA, Supplier Device Package: PG-TDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPC90N04S53R6ATMA1 nach Preis ab 0.63 EUR bis 1.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPC90N04S53R6ATMA1 IPC90N04S53R6ATMA1 Hersteller : Infineon Technologies Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.28 EUR
100+0.92 EUR
500+0.76 EUR
1000+0.64 EUR
2000+0.63 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPC90N04S53R6ATMA1 Hersteller : Infineon Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPC90N04S53R6ATMA1 IPC90N04S53R6ATMA1 Hersteller : Infineon Technologies 5118846953011126infineon-ipc90n04s5-3r6-ds-v01_00-en.pdffileid5546d46258fc0bc1015.pdf Trans MOSFET N-CH 40V 90A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC90N04S53R6ATMA1 IPC90N04S53R6ATMA1 Hersteller : Infineon Technologies Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH