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IPD023N03LF2SATMA1

IPD023N03LF2SATMA1 Infineon Technologies

Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Hersteller: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.78 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD023N03LF2SATMA1 Infineon Technologies

Description: IPD023N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V, Power Dissipation (Max): 3W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 60µA, Supplier Device Package: PG-TO252-3-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.

Weitere Produktangebote IPD023N03LF2SATMA1 nach Preis ab 0.67 EUR bis 2.78 EUR

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IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Hersteller : Infineon Technologies Infineon_IPD023N03LF2S_DataSheet_v01_00_EN-3536065.pdf MOSFETs Addresses a broad range of applications from low- to high-switching frequency
auf Bestellung 3934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.97 EUR
10+1.38 EUR
100+1.08 EUR
500+0.91 EUR
1000+0.74 EUR
2000+0.7 EUR
4000+0.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Hersteller : Infineon Technologies Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH