IPD023N03LF2SATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.78 EUR |
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Technische Details IPD023N03LF2SATMA1 Infineon Technologies
Description: IPD023N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V, Power Dissipation (Max): 3W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 60µA, Supplier Device Package: PG-TO252-3-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.
Weitere Produktangebote IPD023N03LF2SATMA1 nach Preis ab 0.67 EUR bis 2.78 EUR
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IPD023N03LF2SATMA1 | Hersteller : Infineon Technologies |
MOSFETs Addresses a broad range of applications from low- to high-switching frequency |
auf Bestellung 3934 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD023N03LF2SATMA1 | Hersteller : Infineon Technologies |
Description: IPD023N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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