Weitere Produktangebote IPD031N03LGATMA1 nach Preis ab 0.8 EUR bis 5.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IPD031N03LGATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2410 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2410 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 754 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3 |
auf Bestellung 3948 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V |
auf Bestellung 15051 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | INFINEON |
Description: INFINEON - IPD031N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 90 A, 3100 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 94W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3100µohm |
auf Bestellung 1757 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD031N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.8 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.8 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2410 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 212+ | 0.84 EUR |
| IPD031N03LGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2410 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 168+ | 1.07 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.09 EUR |
| 7500+ | 0.98 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 436+ | 1.55 EUR |
| 500+ | 1.38 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
auf Bestellung 3948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.05 EUR |
| IPD031N03LGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
auf Bestellung 15051 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.48 EUR |
| 50+ | 1.87 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.32 EUR |
| IPD031N03LGATMA1 |
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Hersteller: INFINEON
Description: INFINEON - IPD031N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 90 A, 3100 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 94W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3100µohm
Description: INFINEON - IPD031N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 90 A, 3100 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 94W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3100µohm
auf Bestellung 1757 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 5.18 EUR |
| 110+ | 2.11 EUR |
| 129+ | 1.67 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.36 EUR |
| IPD031N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2045 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD031N03LGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)