Weitere Produktangebote IPD031N03LGATMA1 nach Preis ab 0.61 EUR bis 2.57 EUR
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 90A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2724 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3 |
auf Bestellung 5042 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V |
auf Bestellung 4093 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD031N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 90 A, 3100 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 3100µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1430 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD031N03LGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |