IPD034N06N3GATMA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.24 EUR |
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Technische Details IPD034N06N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 93µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPD034N06N3GATMA1 nach Preis ab 1.26 EUR bis 2.9 EUR
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 100A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Power dissipation: 167W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1893 Stücke: Lieferzeit 7-14 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Power dissipation: 167W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET |
auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 100A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 10904 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD034N06N3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0028 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm |
auf Bestellung 5320 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD034N06N3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0028 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm |
auf Bestellung 5320 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD034N06N3GATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |