IPD038N06NF2SATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 52µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.61 EUR |
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Technische Details IPD038N06NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; 60V; 120A; 107W; DPAK; SMT, Electrical mounting: SMT, Technology: SiC, Gate charge: 45nC, On-state resistance: 3.85mΩ, Gate-source voltage: 20V, Drain-source voltage: 60V, Power dissipation: 107W, Drain current: 120A, Case: DPAK, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET.
Weitere Produktangebote IPD038N06NF2SATMA1 nach Preis ab 0.56 EUR bis 2.32 EUR
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IPD038N06NF2SATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 52µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V |
auf Bestellung 3417 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD038N06NF2SATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
auf Bestellung 11829 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD038N06NF2SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD038N06NF2SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; 60V; 120A; 107W; DPAK; SMT Electrical mounting: SMT Technology: SiC Gate charge: 45nC On-state resistance: 3.85mΩ Gate-source voltage: 20V Drain-source voltage: 60V Power dissipation: 107W Drain current: 120A Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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