IPD040N03LGATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2488 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.34 EUR |
70+ | 1.03 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
500+ | 0.73 EUR |
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Technische Details IPD040N03LGATMA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 30V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V.
Weitere Produktangebote IPD040N03LGATMA1 nach Preis ab 0.73 EUR bis 2.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD040N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD040N03LGATMA1 Produktcode: 128410 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
Produkt ist nicht verfügbar |
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IPD040N03LGATMA1 | Hersteller : Infineon Technologies | MOSFET TRENCH <= 40V |
Produkt ist nicht verfügbar |