Weitere Produktangebote IPD040N03LGATMA1 nach Preis ab 1.19 EUR bis 3.56 EUR
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IPD040N03LGATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
auf Bestellung 1849 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD040N03LGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD040N03LGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 1849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 2.26 EUR |
| 50+ | 1.69 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.19 EUR |
| IPD040N03LGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD040N03LGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)