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IPD040N08NF2SATMA1

IPD040N08NF2SATMA1 Infineon Technologies

Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
auf Bestellung 2563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.87 EUR
10+2.66 EUR
100+1.85 EUR
500+1.49 EUR
1000+1.46 EUR
2000+1.27 EUR
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Technische Details IPD040N08NF2SATMA1 Infineon Technologies

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V, Power Dissipation (Max): 3W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 85µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V.

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IPD040N08NF2SATMA1 IPD040N08NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
auf Bestellung 1858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
10+2.73 EUR
100+1.91 EUR
500+1.54 EUR
1000+1.42 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD040N08NF2SATMA1 Hersteller : Infineon Technologies infineon-ipd040n08nf2s-datasheet-v02_02-en.pdf Trans MOSFET N-CH 80V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
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IPD040N08NF2SATMA1 IPD040N08NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
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