IPD046N08N5ATMA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD046N08N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 65µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V.
Weitere Produktangebote IPD046N08N5ATMA1 nach Preis ab 1.62 EUR bis 5.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
 MOSFETs DIFFERENTIATED MOSFETS |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 65µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
auf Bestellung 1749 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
 |
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
IPD046N08N5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 65µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
Produkt ist nicht verfügbar |