IPD046N08N5ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.88 EUR |
| 2500+ | 1.62 EUR |
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Technische Details IPD046N08N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.8V @ 65µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPD046N08N5ATMA1 nach Preis ab 1.89 EUR bis 4.91 EUR
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IPD046N08N5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 90A TO252-3Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.8V @ 65µA |
auf Bestellung 1649 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD046N08N5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.91 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.89 EUR |