auf Bestellung 2000 Stücke:
Lieferzeit 98-112 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.65 EUR |
| 14+ | 3.87 EUR |
| 100+ | 3.07 EUR |
| 250+ | 2.86 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.33 EUR |
| 2000+ | 2.03 EUR |
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Technische Details IPD052N10NF2SATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V, Power Dissipation (Max): 3W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 84µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V.
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| IPD052N10NF2SATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R |
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IPD052N10NF2SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
Produkt ist nicht verfügbar |