IPD060N03LGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.44 EUR |
| 5000+ | 0.41 EUR |
| 7500+ | 0.39 EUR |
| 12500+ | 0.38 EUR |
Produktrezensionen
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Technische Details IPD060N03LGATMA1 Infineon Technologies
Description: INFINEON - IPD060N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 50 A, 6000 µohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 50A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.2V, euEccn: NLR, Verlustleistung: 56W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: OptiMOS 3, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 6000µohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IPD060N03LGATMA1 nach Preis ab 0.43 EUR bis 1.88 EUR
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IPD060N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 56W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD060N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 32652 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD060N03LGATMA1 | Infineon Technologies |
MOSFETs N-Ch 30V 50A DPAK-2 |
auf Bestellung 5917 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD060N03LGATMA1 | INFINEON |
Description: INFINEON - IPD060N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 50 A, 6000 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 56W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 3 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 6000µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD060N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 92+ | 0.78 EUR |
| 101+ | 0.71 EUR |
| 129+ | 0.56 EUR |
| 133+ | 0.54 EUR |
| IPD060N03LGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 32652 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| IPD060N03LGATMA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 50A DPAK-2
MOSFETs N-Ch 30V 50A DPAK-2
auf Bestellung 5917 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.88 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.44 EUR |
| 5000+ | 0.43 EUR |
| IPD060N03LGATMA1 |
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Hersteller: INFINEON
Description: INFINEON - IPD060N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 50 A, 6000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.2V
euEccn: NLR
Verlustleistung: 56W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 3
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 6000µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IPD060N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 50 A, 6000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.2V
euEccn: NLR
Verlustleistung: 56W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 3
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 6000µohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2832 Stücke:
Lieferzeit 14-21 Tag (e)