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IPD075N03LGATMA1

IPD075N03LGATMA1 Infineon Technologies

Infineon-IPD075N03LG-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30431936bc4b011951d824f83aeb Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.61 EUR
5000+ 0.58 EUR
12500+ 0.56 EUR
Mindestbestellmenge: 2500
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Technische Details IPD075N03LGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V.

Weitere Produktangebote IPD075N03LGATMA1 nach Preis ab 0.53 EUR bis 1.36 EUR

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Preis ohne MwSt
IPD075N03LGATMA1 IPD075N03LGATMA1 Hersteller : Infineon Technologies Infineon_IPD075N03LG_DataSheet_v02_02_EN-3362508.pdf MOSFET N-Ch 30V 50A DPAK-2
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.81 EUR
100+ 0.67 EUR
500+ 0.63 EUR
1000+ 0.56 EUR
2500+ 0.55 EUR
Mindestbestellmenge: 3
IPD075N03LGATMA1 IPD075N03LGATMA1 Hersteller : Infineon Technologies Infineon-IPD075N03LG-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30431936bc4b011951d824f83aeb Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 18379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
21+ 0.87 EUR
100+ 0.72 EUR
500+ 0.66 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 16
IPD075N03LGATMA1 IPD075N03LGATMA1 Hersteller : INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2491 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
88+ 0.82 EUR
109+ 0.66 EUR
126+ 0.57 EUR
133+ 0.54 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 53
IPD075N03LGATMA1 IPD075N03LGATMA1 Hersteller : INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
88+ 0.82 EUR
109+ 0.66 EUR
126+ 0.57 EUR
133+ 0.54 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 53
IPD075N03LGATMA1 IPD075N03LGATMA1 Hersteller : Infineon Technologies infineon-ipd075n03lg-datasheet-v02_02-en.pdf Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD075N03LGATMA1
Produktcode: 172911 		Infineon-IPD075N03LG-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30431936bc4b011951d824f83aeb Transistoren > MOSFET N-CH
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