IPD100N04S4L02ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 318+ | 2.03 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.63 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
318 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD100N04S4L02ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 95µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD100N04S4L02ATMA1 nach Preis ab 1.45 EUR bis 4.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD100N04S4L02ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1167 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IPD100N04S4L02ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2056 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IPD100N04S4L02ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
auf Bestellung 2369 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD100N04S4L02ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 1167 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 318+ | 2.03 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.63 EUR |
| IPD100N04S4L02ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 10+ | 3.02 EUR |
| 50+ | 2.31 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.65 EUR |
| IPD100N04S4L02ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
auf Bestellung 2369 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.74 EUR |
| 10+ | 2.32 EUR |
| 100+ | 2.09 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.63 EUR |
| 2500+ | 1.45 EUR |