IPD100N04S4L02ATMA1 Infineon Technologies
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.68 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.31 EUR |
| 2500+ | 1.15 EUR |
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Technische Details IPD100N04S4L02ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 95µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD100N04S4L02ATMA1 nach Preis ab 1.3 EUR bis 3.73 EUR
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IPD100N04S4L02ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CHANNEL_30/40VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2086 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD100N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK T/R |
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IPD100N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD100N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |