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IPD14N06S280ATMA2

IPD14N06S280ATMA2 Infineon Technologies

INFNS09524-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD14N06S280ATMA2 Infineon Technologies

Description: MOSFET N-CH 55V 17A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 4V @ 14µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IPD14N06S280ATMA2 nach Preis ab 0.45 EUR bis 0.77 EUR

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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.71 EUR
100+0.62 EUR
500+0.56 EUR
1000+0.53 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies Infineon_IPD14N06S2_80_DS_v01_00_en-1731712.pdf MOSFETs MOSFET_)40V 60V)
auf Bestellung 3328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.76 EUR
100+0.62 EUR
500+0.50 EUR
1000+0.47 EUR
2500+0.45 EUR
Mindestbestellmenge: 4
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IPD14N06S280ATMA2
Produktcode: 154372
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INFNS09524-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies ipd14n06s2-80_green.pdf Trans MOSFET N-CH 55V 17A Automotive 3-Pin(2+Tab) DPAK T/R
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