IPD160N04LG Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Technische Details IPD160N04LG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 2V @ 10µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).