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IPD220N06L3GATMA1

IPD220N06L3GATMA1 Infineon Technologies

Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
5000+0.43 EUR
12500+0.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD220N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 11µA, Supplier Device Package: PG-TO252-3-311, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V.

Weitere Produktangebote IPD220N06L3GATMA1 nach Preis ab 0.46 EUR bis 1.85 EUR

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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Hersteller : Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 12672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
16+1.13 EUR
100+0.75 EUR
500+0.60 EUR
1000+0.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD220N06L3GATMA1 IPD220N06L3GATMA1 Hersteller : Infineon Technologies Infineon_IPD220N06L3_DS_v02_00_en-2936363.pdf MOSFETs TRENCH 40<-<100V
auf Bestellung 4980 Stücke:
Lieferzeit 66-70 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.19 EUR
100+0.79 EUR
500+0.63 EUR
1000+0.56 EUR
2500+0.51 EUR
5000+0.46 EUR
Mindestbestellmenge: 2
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IPD220N06L3GATMA1 Hersteller : Infineon Technologies ipd220n06l3_rev2.0.pdffolderiddb3a30431441fb5d01148ca9f1be0e77fileiddb3a30431ddc9372011e266fb35.pdf Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH