| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.64 EUR |
| 5000+ | 0.61 EUR |
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Technische Details IPD25DP06LMATMA1 Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3, Vgs(th) (Max) @ Id: 2V @ 270µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO252-3-313.
Weitere Produktangebote IPD25DP06LMATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPD25DP06LMATMA1 | Infineon Technologies |
 Description: MOSFET P-CH 60V 6.5A TO252-3Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IPD25DP06LMATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 6.5A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 28W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD25DP06LMATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Description: MOSFET P-CH 60V 6.5A TO252-3
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD25DP06LMATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 28W (Tc)
Description: MOSFET P-CH 60V 6.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 28W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH