IPD30N03S4L09ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.41 EUR |
| 12500+ | 0.39 EUR |
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Technische Details IPD30N03S4L09ATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD30N03S4L09ATMA1 nach Preis ab 0.39 EUR bis 1.85 EUR
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 6873 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 6873 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2698 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 20825 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N03S4L09ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD30N03S4L09ATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0073 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0073ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 3153 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N03S4L09ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD30N03S4L09ATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0073 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0073ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 3153 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N03S4L09ATMA1 Produktcode: 202239
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
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IPD30N03S4L09ATMA1 | Hersteller : Infineon Technologies |
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IPD30N03S4L09ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 9mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
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