IPD30N06S2L13ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPD30N06 - 55V-60V N-CHANNEL AUT
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Technische Details IPD30N06S2L13ATMA1 Infineon Technologies
Description: IPD30N06 - 55V-60V N-CHANNEL AUT, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 80µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.