IPD30N06S2L23ATMA3 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 0.77 EUR |
| 5000+ | 0.72 EUR |
| 7500+ | 0.7 EUR |
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Technische Details IPD30N06S2L23ATMA3 Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD30N06S2L23ATMA3 nach Preis ab 0.76 EUR bis 2.76 EUR
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IPD30N06S2L23ATMA3 | Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 58681 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N06S2L23ATMA3 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10010 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD30N06S2L23ATMA3 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
MOSFETs MOSFET_)40V 60V)
auf Bestellung 58681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.81 EUR |
| 5000+ | 0.76 EUR |
| IPD30N06S2L23ATMA3 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.76 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |