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IPD30N10S3L34ATMA2

IPD30N10S3L34ATMA2 Infineon Technologies

Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
Mindestbestellmenge: 6
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Technische Details IPD30N10S3L34ATMA2 Infineon Technologies

Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 29µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IPD30N10S3L34ATMA2 nach Preis ab 0.78 EUR bis 3.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPD30N10S3L34ATMA2 Hersteller : INFINEON TECHNOLOGIES Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.78 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N10S3L34ATMA2 Hersteller : Infineon Technologies Infineon_IPD30N10S3L_34_DataSheet_v01_02_EN.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.13 EUR
10+2.01 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
2500+0.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 Hersteller : Infineon Technologies Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH