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IPD350N06LGBTMA1

IPD350N06LGBTMA1 Infineon Technologies

ipd350n06lgrev1.1.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
355+0.41 EUR
Mindestbestellmenge: 355
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Technische Details IPD350N06LGBTMA1 Infineon Technologies

Description: MOSFET N-CH 60V 29A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 28µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V.

Weitere Produktangebote IPD350N06LGBTMA1 nach Preis ab 0.32 EUR bis 1.72 EUR

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IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies ipd350n06lgrev1.1.pdf Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
251+0.58 EUR
264+0.53 EUR
271+0.5 EUR
287+0.45 EUR
292+0.42 EUR
500+0.39 EUR
1000+0.35 EUR
3000+0.34 EUR
6000+0.32 EUR
Mindestbestellmenge: 251
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Gate charge: 13nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1551 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
48+1.5 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Gate charge: 13nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies IPD350N06L+G++Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c320778777982 Description: MOSFET N-CH 60V 29A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies ipd350n06lgrev1.1.pdf Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies ipd350n06lgrev1.1.pdf Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies IPD350N06L+G++Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c320778777982 Description: MOSFET N-CH 60V 29A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
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IPD350N06LGBTMA1 IPD350N06LGBTMA1 Hersteller : Infineon Technologies Infineon_IPD350N06LG__DS_v01_03_en-3359999.pdf MOSFET TRENCH 40<-<100V
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