IPD35N10S3L26ATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 5567 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 368+ | 1.48 EUR |
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Technische Details IPD35N10S3L26ATMA2 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 39µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD35N10S3L26ATMA2 nach Preis ab 0.95 EUR bis 3.34 EUR
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IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2320 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
MOSFETs 100 V, N-Ch, 24 m? max, Automotive MOSFET, DPAK, OptiMOS-T |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
SP005549678 |
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IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD35N10S3L26ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |