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IPD42DP15LMATMA1

IPD42DP15LMATMA1 Infineon Technologies

Infineon_IPD42DP15LM_DataSheet_v02_00_EN-2942438.pdf Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
auf Bestellung 3304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.19 EUR
10+ 2.68 EUR
100+ 2.13 EUR
250+ 2.08 EUR
500+ 1.78 EUR
1000+ 1.52 EUR
2500+ 1.44 EUR
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Technische Details IPD42DP15LMATMA1 Infineon Technologies

Description: TRENCH >=100V PG-TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V, Power Dissipation (Max): 3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.04mA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V.

Weitere Produktangebote IPD42DP15LMATMA1 nach Preis ab 1.53 EUR bis 3.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPD42DP15LMATMA1 IPD42DP15LMATMA1 Hersteller : Infineon Technologies Infineon-IPD42DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde11d69b1bb1 Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
auf Bestellung 1094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.22 EUR
10+ 2.67 EUR
100+ 2.13 EUR
500+ 1.8 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 6
IPD42DP15LMATMA1 Hersteller : Infineon Technologies infineon-ipd42dp15lm-datasheet-v02_00-en.pdf P Channel Power Mosfet
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD42DP15LMATMA1 IPD42DP15LMATMA1 Hersteller : Infineon Technologies Infineon-IPD42DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde11d69b1bb1 Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
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