IPD50N04S308ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 155+ | 0.9 EUR |
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Technische Details IPD50N04S308ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD50N04S308ATMA1 nach Preis ab 0.78 EUR bis 1.55 EUR
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2484 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 5583 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2182 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 4953 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 3039 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 117554 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Description: IPD50N04 - 20V-40V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 131311 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50N04S308ATMA1 | Hersteller : Infineon |
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auf Bestellung 242500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD50N04S308ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 50A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |