IPD50N06S409ATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 4908 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 1.06 EUR |
| 151+ | 1 EUR |
| 153+ | 0.95 EUR |
| 172+ | 0.82 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.58 EUR |
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Technische Details IPD50N06S409ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 4V @ 34µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD50N06S409ATMA2 nach Preis ab 0.58 EUR bis 2.42 EUR
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4908 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2309 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
MOSFET MOSFET |
auf Bestellung 14157 Stücke: Lieferzeit 14-28 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : INFINEON |
Description: INFINEON - IPD50N06S409ATMA2 - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0071ohm |
auf Bestellung 14971 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : INFINEON |
Description: INFINEON - IPD50N06S409ATMA2 - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0071ohm |
auf Bestellung 14971 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD50N06S409ATMA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IPD50N06S409ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPD50N06S409ATMA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |