IPD50N06S4L08ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.7 EUR |
| 5000+ | 0.67 EUR |
| 7500+ | 0.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD50N06S4L08ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 35µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD50N06S4L08ATMA2 nach Preis ab 0.62 EUR bis 3.64 EUR
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2277 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 42284 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1884 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 701 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2269 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
MOSFETs MOSFET |
auf Bestellung 9347 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4818 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.7 EUR |
| 5000+ | 0.65 EUR |
| 7500+ | 0.62 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.01 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 42284 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| 10000+ | 0.88 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 1.11 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2269 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.05 EUR |
| 120+ | 1.43 EUR |
| 200+ | 1.37 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.99 EUR |
| 2000+ | 0.8 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET
MOSFETs MOSFET
auf Bestellung 9347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.01 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.88 EUR |
| IPD50N06S4L08ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.12 EUR |