IPD50N10S3L16ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.18 EUR |
| 5000+ | 1.10 EUR |
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Produktbewertung abgeben
Technische Details IPD50N10S3L16ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 60µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD50N10S3L16ATMA1 nach Preis ab 0.97 EUR bis 4.40 EUR
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2332 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2332 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 9239 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD50N10S3L16ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 50 A, 0.0125 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0125ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2186 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD50N10S3L16ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 50 A, 0.0125 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0125ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2336 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPD50N10S3L16ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Technology: OptiMOS® -T Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Case: PG-TO252-3-11 Drain current: 38A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IPD50N10S3L16ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPD50N10S3L16ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Technology: OptiMOS® -T Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Case: PG-TO252-3-11 Drain current: 38A |
Produkt ist nicht verfügbar |