IPD50R280CEAUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD50R280CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252, Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 350µA, Power Dissipation (Max): 119W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPD50R280CEAUMA1 nach Preis ab 0.75 EUR bis 2.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD50R280CEAUMA1 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 4893 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IPD50R280CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 13A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 350µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V |
auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD50R280CEAUMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 4893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.76 EUR |
| 10000+ | 0.75 EUR |
| IPD50R280CEAUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
auf Bestellung 4764 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.89 EUR |


