IPD50R2K0CEAUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.26 EUR |
| 5000+ | 0.24 EUR |
| 7500+ | 0.23 EUR |
| 12500+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD50R2K0CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V.
Weitere Produktangebote IPD50R2K0CEAUMA1 nach Preis ab 0.27 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPD50R2K0CEAUMA1 | Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50R2K0CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 2.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V |
auf Bestellung 24537 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50R2K0CEAUMA1 | Infineon |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD50R2K0CEAUMA1 |
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Hersteller: Infineon Technologies
MOSFET CONSUMER
MOSFET CONSUMER
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.29 EUR |
| 10000+ | 0.27 EUR |
| IPD50R2K0CEAUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 24537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| IPD50R2K0CEAUMA1 |
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Hersteller: Infineon
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)