IPD50R399CPATMA1 Infineon Technologies
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 1.55 EUR |
| 100+ | 1.35 EUR |
| 110+ | 1.18 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD50R399CPATMA1 Infineon Technologies
Description: LOW POWER_LEGACY, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V.
Weitere Produktangebote IPD50R399CPATMA1 nach Preis ab 0.92 EUR bis 3.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
auf Bestellung 1063 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 550V 9A DPAK-2 |
auf Bestellung 2068 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IPD50R399CPATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
Produkt ist nicht verfügbar |