Technische Details IPD50R520CPATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3, Case: PG-TO252-3, Mounting: SMD, Technology: CoolMOS™, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, On-state resistance: 0.52Ω, Drain current: 7.1A, Power dissipation: 66W, Gate-source voltage: ±20V, Drain-source voltage: 500V.
Weitere Produktangebote IPD50R520CPATMA1
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IPD50R520CPATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 500V 7.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD50R520CPATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY |
Produkt ist nicht verfügbar |
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IPD50R520CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.52Ω Drain current: 7.1A Power dissipation: 66W Gate-source voltage: ±20V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |