| Anzahl | Preis |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| 2500+ | 0.44 EUR |
| 5000+ | 0.38 EUR |
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Technische Details IPD50R650CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V.
Weitere Produktangebote IPD50R650CEAUMA1 nach Preis ab 0.58 EUR bis 1.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPD50R650CEAUMA1 | Infineon Technologies |
 Description: MOSFET N-CH 500V 9A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Supplier Device Package: PG-TO252-3-344 Vgs(th) (Max) @ Id: 3.5V @ 150µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1223 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50R650CEAUMA1 | Infineon |
|
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD50R650CEAUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| IPD50R650CEAUMA1 |
|
Hersteller: Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)