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IPD50R800CEAUMA1

IPD50R800CEAUMA1 Infineon Technologies

Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.45 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD50R800CEAUMA1 Infineon Technologies

Description: CONSUMER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO252-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.

Weitere Produktangebote IPD50R800CEAUMA1 nach Preis ab 0.43 EUR bis 1.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD50R800CEAUMA1 IPD50R800CEAUMA1 Infineon Technologies Infineon_IPD50R800CE_DS_v02_03_EN-1731731.pdf MOSFET CONSUMER
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.2 EUR
10+1.07 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
2500+0.47 EUR
5000+0.43 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R800CEAUMA1 IPD50R800CEAUMA1 Infineon Technologies Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2 Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 5199 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
17+1.04 EUR
100+0.72 EUR
500+0.6 EUR
1000+0.51 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R800CEAUMA1 Infineon_IPD50R800CE_DS_v02_03_EN-1731731.pdf
IPD50R800CEAUMA1
Hersteller: Infineon Technologies
MOSFET CONSUMER
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.2 EUR
10+1.07 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
2500+0.47 EUR
5000+0.43 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R800CEAUMA1 Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2
IPD50R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 5199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
17+1.04 EUR
100+0.72 EUR
500+0.6 EUR
1000+0.51 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH