| Anzahl | Preis |
|---|---|
| 1+ | 4.51 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.92 EUR |
| 2500+ | 1.53 EUR |
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Technische Details IPD60R170CFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 14A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V, Power Dissipation (Max): 76W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 300µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V.
Weitere Produktangebote IPD60R170CFD7ATMA1 nach Preis ab 2.51 EUR bis 5.53 EUR
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IPD60R170CFD7ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 14A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4.5V @ 300µA Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD60R170CFD7ATMA1 | Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD60R170CFD7ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 14A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.51 EUR |
| IPD60R170CFD7ATMA1 |
|
Hersteller: Infineon
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)