IPD60R180CM8XTMA1 Infineon Technologies
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 2.14 EUR |
| 72+ | 1.94 EUR |
| 76+ | 1.78 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.55 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.34 EUR |
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Technische Details IPD60R180CM8XTMA1 Infineon Technologies
Description: IPD60R180CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tj), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 127W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 140µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V.
Weitere Produktangebote IPD60R180CM8XTMA1 nach Preis ab 1.34 EUR bis 3.12 EUR
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 18A T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPD60R180CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
auf Bestellung 1413 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 2499 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 18A T/R |
Produkt ist nicht verfügbar |
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
MOSFET Power Transistor |
Produkt ist nicht verfügbar |
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IPD60R180CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPD60R180CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
Produkt ist nicht verfügbar |