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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1 Infineon Technologies

Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.47 EUR
5000+ 0.45 EUR
Mindestbestellmenge: 2500
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Technische Details IPD60R1K0CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 6.8A 61W TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO252-3-344, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.

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Preis ohne MwSt
IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Hersteller : Infineon Technologies Infineon_IPD60R1K0CE_DS_v02_02_EN-3362331.pdf MOSFET CONSUMER
auf Bestellung 16441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.95 EUR
10+ 0.87 EUR
100+ 0.71 EUR
500+ 0.62 EUR
1000+ 0.53 EUR
2500+ 0.45 EUR
5000+ 0.43 EUR
Mindestbestellmenge: 3
IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 10017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.25 EUR
17+ 1.08 EUR
100+ 0.75 EUR
500+ 0.63 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 15
IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Hersteller : Infineon Technologies 888299782089354dgdlfolderid5546d4624c9e0f0e014c9e8dfd1515f0fileid5546d46249be182.pdf Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)